利用化学气相沉积法在SiO2小球基底上制备纳米碳管的研究

利用匀胶机将经过超声混合的二氧化硅小球的酒精溶液旋涂在洗净的硅片上,获得了具有曲面的纳米碳管生长基底.利用以二茂铁和二甲苯作为反应前驱体的化学气相沉积法在该基底上实现了碳管在二氧化硅与硅之间的选择性生长,并在不同的沉积温度条件下,可以分别获得球状和束状碳管产物.通过扫描电镜观察分析经过退火处理的原始基底的表面形貌,讨论了碳管产物与反应温度之间的关系.

Growth of carbon nanotubes on SiO2-particle substrates via CVD method

By dispersing the solution of silica particles in alcohol on the carefully cleaned silicon wafer, substrates with a curved surface were obtained for growing carbon nanotubes, The growth method employed in this study is chemical vapor deposition from a mixture of ferrocene and xylene, by which a strong selective growth from SiO2 to Si was observed. In this study, carbon nanotubes also preferred to grow on SiO2 , although the silica was in the form of spherical particle instead of planar film. On this curved-surface substrate, carbon nanotubes could grow into either carbon nanotube bundles or carbon nanotube balls at different deposition temperatures. By examining the change of the morphology of SiO2 particles annealed at different temperatures, the relationship between the morphology of the carbon nanotube products and the deposition temperature was also investigated.