Fabrication and characterization of a depletion-mode ZnS0.07Se0.93 MESFET |
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Authors: | Wang A.Z.H. Anderson W.A. |
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Affiliation: | Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY; |
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Abstract: | We report the fabrication and characterization of a depletion-mode n-channel ZnS0.07Se0.93 metal-semiconductor field effect transistor (MESFET). A ZnSSe FET could be a key element in opto-electronic integration consisting of light emitters, light receivers and MESFET pre-amplifiers. Mesa isolation, recess etching and self-alignment techniques were adopted to optimize the MESFET performance. Source and drain (S/D) ohmic contacts and gate Schottky contact were formed by Cr/In/Cr and Au deposition, respectively. Depletion mode FET's with varying gate width-to-length ratio of W/L=200 μm/20 μm, 200 μm/4 μm and 200 μm/2 μm were fabricated. A 2 μm FET was characterized as follows: the turn-on voltage, Von≈1.75 V, the pinch-off voltage, Vp≈-13 V, the unit transconductance, gm≈8.73 mS/mm, and the breakdown voltage with zero gate-source bias, BV≈28 V |
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