| MO—PECVD SnO2—x气敏薄膜 |
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| 引用本文： | 李支文,冯蕴道.MO—PECVD SnO2—x气敏薄膜[J].功能材料,1993,24(2):123-128. |
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| 作者姓名： | 李支文 冯蕴道 |
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| 作者单位： | 中国科学技术大学，上海轻工业专科学校，中国科学技术大学，中国科学技术大学 合肥，230026，上海，200433，合肥，230026，合肥，230026 |
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| 摘 要： | 以金属有机化合物(MO)四甲基锡sn(CH_3)_4]为源物质,利用等离子体增强化学气相沉积技术,分别在单晶硅片、三氧化二铝陶瓷基片上淀积了纯净的SnO_(2-x)薄膜,对淀积的一些工艺条件,膜的结构、成分和薄膜元件的气敏性能进行了研究,并与普通PECVDSnO_(2-x)薄膜元件的气敏性能作了比较,对SnO_(2-x)膜的气敏机理作了探讨。
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| 关 键 词： | 半导体材料 气敏薄膜 气相淀积 |
MO-PECVDSnO_(2-x) Gas-Sensing Thin Film |
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| Li Zhi-wen Cui Yu-ping Shen Yu-sheng.MO-PECVDSnO_(2-x) Gas-Sensing Thin Film[J].Journal of Functional Materials,1993,24(2):123-128. |
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| Authors: | Li Zhi-wen Cui Yu-ping Shen Yu-sheng |
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| Abstract: | Fine SnO_(2-x) gas-sensing thin films on the crystal silicon and Al_2O_3 ceramic substrats were prepared by MO-PECVD process,using metallorga- nic compound Sn(CH_3)_4 as a source ma- terial.The deposition factors,the com- positions,and structures of the films were studied.Then the gas-sensing cha- racteristics of the films were studied and compared with those of PECVD SnO_(2-x) thin films using SnCl_4 as a source mate- rial.In this paper the pas-sensing me- chanism of the films were also discussed. |
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| Keywords: | metallorganic compound PECVD(plasma enhanced chemical vapor deposition)SnO_(2-x) Gas-sensing or gas Sensor |
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