| A DBRTD with a High PVCR and a Peak Current Density at Room Temperature |
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| 引用本文： | Yili Chengrong,Xie Changqing,Wang Congshun,Liu Ming,and Ye Tianchun. A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J]. 半导体学报, 2005, 26(10): 1871-1874 |
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| 作者姓名： | Yili Chengrong Xie Changqing Wang Congshun Liu Ming and Ye Tianchun |
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| 作者单位： | 中国科学院微电子研究所微加工与纳米技术实验室 北京100029(易里成荣，谢常青，王从舜，刘明)，中国科学院微电子研究所微加工与纳米技术实验室 北京100029(叶甜春) |
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| 基金项目： | 国家自然科学基金资助项目(批准号:60236010)~~ |
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| 摘 要： | AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes(DBRTDs) grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated.By sandwiching the In0.1Ga0.9As layer between GaAs layers,potential wells beside the two sides of barrier are deepened,resulting in an increase of the peak-to-valley current ratio (PVCR) and a peak current density.A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total current density in the device is increased.The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs.The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature.
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| 关 键 词： | resonant tunneling diode peak-to-valley current ratio peak current density |
| 文章编号： | 0253-4177（2005）10-1871-04 |
| 收稿时间： | 2005-04-16 |
| 修稿时间： | 2005-05-27 |
A DBRTD with a High PVCR and a Peak Current Density at Room Temperature |
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| Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, Ye Tianchun. A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J]. Chinese Journal of Semiconductors, 2005, 26(10): 1871-1874 |
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| Authors: | Yili Chengrong Xie Changqing Wang Congshun Liu Ming Ye Tianchun |
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| Affiliation: | Micro-Processing and Nano- Technology Laboratory, Institute of Microelectronics , Chinese Acaderny of Sciences, Beijing 100029, China |
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| Abstract: | AlAs/GaAs/In_0.1Ga_0.9As/GaAs/AlAs double-barrier resonant tunneling diodes(DBRTDs) grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated.By sandwiching the In_0.1Ga_0.9As layer between GaAs layers,potential wells beside the two sides of barrier are deepened,resulting in an increase of the peak-to-valley current ratio (PVCR) and a peak current density.A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total current density in the device is increased.The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs.The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm~2 at room temperature. |
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| Keywords: | resonant tunneling diode peak-to-valley current ratio peak current density |
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