| 2位GaAs超高速模-数转换电路的设计与制作 |
| |
| 引用本文： | 郑晓光,王长河,綦素琴. 2位GaAs超高速模-数转换电路的设计与制作[J]. 微纳电子技术, 1991, 0(4) |
| |
| 作者姓名： | 郑晓光 王长河 綦素琴 |
| |
| 作者单位： | 机电部第13研究所，机电部第13研究所，机电部第13研究所 石家庄 050051，石家庄 050051，石家庄 050051 |
| |
| 摘 要： | 模数(A-D)转换电路是信号处理系统中的一种关键性元件。本文结合现有GaAs起高速集成电路工艺,提出了一种2位GaAs A-D转换电路的设计方法,并制作出了单片形式的2位GaAs A/D转换电路。实验结果表明,该电路能正常工作在1Gs/s的转换速率下。它的转换时间小于1.0ns,电路功耗不高于340mW。这说明它在速度和功耗方面已展现出比Si双极电路更为广阔的发展前景。
|
| 关 键 词： | 超高速数字集成电路 砷化镓 模-数转换器 |
Design and Fabrication of 2-Bit GaAs Analog-Digital Converter IC |
| |
| Zheng Xiaoguang,Wang Changhe,Qi Suqin. Design and Fabrication of 2-Bit GaAs Analog-Digital Converter IC[J]. Micronanoelectronic Technology, 1991, 0(4) |
| |
| Authors: | Zheng Xiaoguang Wang Changhe Qi Suqin |
| |
| Abstract: | The analog-digital (A-D) converter is a critical component of signal processing systems. This paper describes the design of 2-bit A-D converter using GaAs VHSIC technology being commonly used. Monolithic integrated 2-bit A-D circuits were fabricated and successfully operated at gigahertz sampling rates. Its conversion time is less than 1.0ns and the power loss is not more than 340 mW. This exhibits the excellent performances than Si bipolar based A-D in speed and power loss. |
| |
| Keywords: | Gallium arsenide Ultra-high speed digital IC Analog-digital converter |
| 本文献已被 CNKI 等数据库收录！ |
