Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing |
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Authors: | E Belas J Franc R Grill A L Toth P Horodysky P Moravec P Höschl |
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Affiliation: | (1) Institute of Physics, Charles University, CZ-121 16 Prague 2, Czech Republic;(2) Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Hungary |
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Abstract: | The kinetics of the p-to-n conversion and effect of the anomalous n-to-p reconversion of p-CdTe during annealing at 400–700°C
under Cd-rich overpressure have been investigated. The p-to-n conversion is related to diffusion of Cd interstitials together
with gettering of foreign fast diffusing acceptors to the center of the sample. The propagation of the n-type layer during
annealing at 500°C was found to be significantly slower then the standard square-root dependence on annealing time. The anomalous
n-to-p reconversion of the converted n-type sample was observed after sufficient long time annealing at 600°C. |
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Keywords: | Annealing CdTe diffusion p-n junction formation photoluminescence |
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