Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes |
| |
| Authors: | T Kimoto O Takemura H Matsunami T Nakata M Inoue |
| |
| Affiliation: | (1) Department of Electronic Science & Engineering, Kyoto University, 606-01 Sakyo, Kyoto, Japan;(2) Ion Engineering Research Institute, Corporation, Tsuda, 573-01 Hirakata, Osaka, Japan |
| |
| Abstract: | Aluminum (Al) and boron (B) ion implantations at room temperature into n-type 6H-SiC epilayers have been investigated. Rutherford
backscattering spectroscopy (RBS) channeling measurements revealed larger lattice damage in Al+ implantation at a given total implantation dose. A nearly perfect electrical activation ratio (>90%) could be attained by
high-temperature annealing at 1600°C for Al+ and 1700°C for B+ implantations. Mesa pn junction diodes formed by either Al+ or B+ implantation with a 1×1014 cm−2 dose exhibited high blocking voltages of 950∼1070 V, which are 80∼90% of the ideal value predicted for the diode structure.
The forward current can clearly be divided into two components of diffusion and recombination currents. B+-implanted diodes showed higher breakdown voltage on average but poor forward conduction. Comparison of the performance of
Al+ and B+-implanted diodes is discussed. |
| |
| Keywords: | Acceptor doping electrical activation ion implantation pn junction diode silicon carbide |
| 本文献已被 SpringerLink 等数据库收录！ |
|
