Mesa and planar SiGe-HBTs on MBE-wafers |
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Authors: | A. Schüppen A. Gruhle H. Kibbel U. König |
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Affiliation: | (1) Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge Strasse 11, 89081 Ulm, Germany |
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Abstract: | SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with fmax and fT up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented. |
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