Pressureless sintering of Si3N4 with Y2O2 and Al2O3

Pressureless sintering of Si₃N₄ with Y₂O₃ and Al₂O₃ as additives was carried out at 1750°C in N₂ atmosphere. Si₃N₄ materials which had more than 92% relative density were obtained with 20wt% addition of additives. The flexural strength of as-sintered materials containing 5 to 8.6wt% Al₂O₃ and 15 to 11.4wt% Y₂O₃ was in the range of 480 to 560 MPa at room temperature. The glassy grain-boundary phase of as-sintered materials crystallized to 3Y₂O₃ · 5Al₂O₃ (YAG), Y₂O₃ · SiO₂ (YS), Y₂O₃ · 2SiO₂ (Y2S) and 10Y₂O₃ · 9SiO₂ sd Si₃N₄ (NA) by heat-treatment at 1250° C for 3 days. A specimen containing 15wt% Y₂O₃ and 5wt% Al₂O₃ sintered at 1750° C for 4 h was heat-treated at 1250° C for 3 days to precipitate YAG and YS. The nitrogen concentration of the grain-boundary glassy phase of the specimen was found to be very high, and therefore the flexural strength of the crystallized specimen scarcely decreased at elevated temperatures (the flexural strength of this specimen is 390 MPa at room temperature and 360 MPa at 1300° C). Resistance to oxidation at 1200° C of the specimen was good as well as the flexural strength, compared with that of as-sintered materials.