| 高真空化学气相外延炉的研制 |
| |
| 引用本文： | 谢自力.高真空化学气相外延炉的研制[J].真空,2000(4):31-35. |
| |
| 作者姓名： | 谢自力 |
| |
| 作者单位： | 电子部南京第五十五研究所!江苏南京210016 |
| |
| 摘 要： | 研制出满足Ｓｉ１－ｘＧｅｘ异质结薄膜材料生长工艺的高真空化学气相外延炉，介绍了Ｓｉ１－ｘＧｅｘ异质结薄膜材料的生长工艺，详述了该气相外延设备的性能指标、结构组成和设计原理，并且给出了利用该设备生长Ｓｉ１－ｘＧｅｘ异质薄膜的实验结果。
|
| 关 键 词： | 锗硅异质结构 高真空化学气相色延炉 薄膜制备 |
Development on High Vacuum Chemical Vapour Deposition Furnace |
| |
| XIE Zi li,CHEN Gui zang,LUO Hong,GUO Hai zhou,YAN Jun.Development on High Vacuum Chemical Vapour Deposition Furnace[J].Vacuum,2000(4):31-35. |
| |
| Authors: | XIE Zi li CHEN Gui zang LUO Hong GUO Hai zhou YAN Jun |
| |
| Abstract: | The high vacuum chemical vapour deposition(HV CVD) furnace has been developed for the growth of Si 1-x Ge x heterostructure material. The technology of growth Si 1-x Ge x heterostructure epitaxial layer is introduced. The constitution, construction and design principle of the HV CVD furnace are described. Also the conclusion of growth the Si 1-x Ge x heterostructure epitaxial layer using this furnace has been given. |
| |
| Keywords: | high vacuum chemical vapour deposition vapour deposition furnace moleculer pump SiGe heterostructure |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
