| 一种新的抗总剂量辐射加固P沟道VDMOS终端结构 |
| |
| 引用本文： | 唐昭焕,刘嵘侃,谭开洲,罗俊,胡刚毅,李儒章,任华平,王斌.一种新的抗总剂量辐射加固P沟道VDMOS终端结构[J].半导体学报,2014,35(5):054005-4. |
| |
| 作者姓名： | 唐昭焕 刘嵘侃 谭开洲 罗俊 胡刚毅 李儒章 任华平 王斌 |
| |
| 作者单位： | Science and Technology on Analog Integrated Circuit Laboratory;Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp;Quality and Safety Detecting Centre of Chongqing Special Equipment |
| |
| 基金项目： | supported by the Pre-Research Foundation(No.51311050202) |
| |
| 摘 要： | Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad（Si）. Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment.
|
| 关 键 词： | VDMOS器件 总剂量辐照 终端结构 硬化 DMOS工艺 空间辐射环境 X-射线 P沟道 |
| 修稿时间： | 1/1/2014 12:00:00 AM |
A novel terminal structure for total dose irradiation hardened of a P-VDMOS |
| |
| Tang Zhaohuan,Liu Rongkan,Tan Kaizhou,Luo Jun,Hu Gangyi,Li Ruzhang,Ren Huaping and Wang Bin.A novel terminal structure for total dose irradiation hardened of a P-VDMOS[J].Chinese Journal of Semiconductors,2014,35(5):054005-4. |
| |
| Authors: | Tang Zhaohuan Liu Rongkan Tan Kaizhou Luo Jun Hu Gangyi Li Ruzhang Ren Huaping and Wang Bin |
| |
| Affiliation: | Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Quality and Safety Detecting Centre of Chongqing Special Equipment, Chongqing 401121, China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China |
| |
| Abstract: | P-channel VDMOS total dose irradiation hardened stop field limited ring breakdown voltage |
| |
| Keywords: | P-channel VDMOS total dose irradiation hardened stop field limited ring breakdown voltage |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
