| 关于石墨烯上Ge/Au/Ni/Au欧姆接触的对比研究 |
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| 引用本文： | 闵文超,孙浩,张祁连,陈志蓥,张燕辉,于广辉,孙晓玮. 关于石墨烯上Ge/Au/Ni/Au欧姆接触的对比研究[J]. 半导体学报, 2014, 35(5): 056001-4 |
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| 作者姓名： | 闵文超 孙浩 张祁连 陈志蓥 张燕辉 于广辉 孙晓玮 |
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| 作者单位： | Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology;University of Chinese Academy of Sciences;State Key Laboratory of Functional Materials for Informatics |
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| 摘 要： | Superior graphene-metal contacts can improve the performance of graphene devices. We report on an experimental demonstration of Ge/Au/Ni/Au-based ohmic contact on graphene. The transfer length method （TLM） is adopted to measure the resistivity of graphene-metal contacts. We designed a process flow, which can avoid residual photoresist at the interface of metal and graphene. Additionally, rapid thermal annealing （RTA） at different temperatures as a post-processing method is studied to improve graphene-metal contact. The results reveal that the contact resistivity of graphene and Ge/Au/Ni/Au can reach 10^-5 Ω· cm^2 after RTA, and that 350 ℃ is optimum annealing temperature for the contact of graphene-Ge/Au/Ni/Au. This paper provides guidance for fabrication and applications of graphene devices.
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| 关 键 词： | 石墨 金属 Ni 欧姆 Au 接触电阻率 锗 退火温度 |
A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene |
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| Min Wenchao,Sun Hao,Zhang Qilian,Chen Zhiying,Zhang Yanhui,Yu Guanghui and Sun Xiaowei. A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene[J]. Chinese Journal of Semiconductors, 2014, 35(5): 056001-4 |
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| Authors: | Min Wenchao Sun Hao Zhang Qilian Chen Zhiying Zhang Yanhui Yu Guanghui Sun Xiaowei |
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| Affiliation: | Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai 200050, China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China |
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| Abstract: | ohmic contact graphene anneal |
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| Keywords: | ohmic contact graphene anneal |
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