| Ga2O3缓冲层厚度对柔性衬底沉积Cu/ITO薄膜性能的影响 |
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| 引用本文： | 庄慧慧,闫金良,徐诚阳,孟德兰.Ga2O3缓冲层厚度对柔性衬底沉积Cu/ITO薄膜性能的影响[J].半导体学报,2014,35(5):053001-5. |
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| 作者姓名： | 庄慧慧 闫金良 徐诚阳 孟德兰 |
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| 作者单位： | School of Physics and Optoelectronic Engineering, Ludong University |
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| 基金项目： | 国家自然科学基金;省自然科学基金 |
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| 摘 要： | Cu and Cu/ITO films were prepared on polyethylene terephthalate （PET） substrates with a Ga2O3 buffer layer using radio frequency （RF） and direct current （DC） magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu（4.2 nm）/ITO（30 nm） films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10^-3 Ω^ -1 were achieved for Cu（4.2 nm）/ITO（30 nm） films with a Ga2O3 layer thickness of 15 nm.
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| 关 键 词： | ITO薄膜 薄膜沉积 电学性质 柔性衬底 氧化镓 缓冲层 Cu 厚度 |
Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates |
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| Zhuang Huihui,Yan Jinliang,Xu Chengyang and Meng Delan.Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates[J].Chinese Journal of Semiconductors,2014,35(5):053001-5. |
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| Authors: | Zhuang Huihui Yan Jinliang Xu Chengyang and Meng Delan |
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| Affiliation: | School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China;School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China |
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| Abstract: | transparent conductive films Ga203 buffer layer Cu/ITO films optical property electrical property |
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| Keywords: | transparent conductive films Ga2O3 buffer layer Cu/ITO films optical property electrical property |
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