The Crystallographic Properties of Strained Silicon Measured by X-Ray Diffraction |
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Authors: | M Erdtmann T A Langdo |
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Affiliation: | (1) AmberWave Systems Corp., Salem, 03079, NH, USA |
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Abstract: | Strained silicon represents a materials-based enhancement to further scaling of CMOS transistors. In epitaxial strained silicon
substrates, strain is provided by a relaxed SiGe graded buffer layer that expands the in-plane lattice constant of silicon.
Because this is accompanied by the introduction of crystalline defects, in the form of dislocations, mosaic structure, and
lattice tilting, the deposition of strained silicon occurs on imperfect substrates. Therefore, there is a fundamental need
to study the materials properties to ensure strained silicon substrates meet the rigorous criteria for CMOS processing. This
paper focuses on the in-depth investigation of the crystallographic properties of epitaxial strained silicon and strained
silicon on insulator (SSOI) substrates by X-ray diffraction (XRD). The results for both epitaxial strained silicon and bonded
SSOI substrates are presented and contrasted, with particular emphasis on the effect of the layer transfer process used during
the formation of SSOI substrates. Although the focus is on strained silicon, the X-ray diffraction techniques highlighted
in this paper are readily extendable to other materials heterostructures, such as germanium on insulator, strained germanium,
and III–V compound semiconductors on insulator, allowing characterization of many future microelectronic platforms. |
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