| 晶体管非线性失真分析 |
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| 引用本文： | 何放,胡思福.晶体管非线性失真分析[J].电子与信息学报,1992,14(2):190-198. |
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| 作者姓名： | 何放 胡思福 |
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| 作者单位： | 亚光电工厂，电子科技大学 成都 610051，成都 610054 |
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| 摘 要： | 本文从器件物理和结构上提出双极型晶体管非线性失真模型。模型包含8个参量:(1)有效基区展宽效应;(2)发射极电流集边效应;(3)基区电导调制效应;(4)发射结电阻的非线性效应;(5)发射结电容的非线性效应;(6)集电结电容的非线性效应;(7)寄生电容的非线性效应;(8)电流放大系数和雪崩倍增效应与电压的非线性关系。利用Taylor级数展开分析各模型参数,并编制了计算程序,定量计算了互调失真与工作频率、发射极条宽、基区宽度、发射极线电流密度,基区掺杂浓度等重要参数的关系。计算结果与实验结果基本吻合。
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| 关 键 词： | 晶体管 失真 非线性分析 |
| 收稿时间： | 1991-1-31 |
| 修稿时间： | 1991-7-8 |
NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR |
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| He Fang,Hu Sifu.NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR[J].Journal of Electronics & Information Technology,1992,14(2):190-198. |
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| Authors: | He Fang Hu Sifu |
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| Affiliation: | Yaguang Electronic Factory Chengdu 610051;University of Electronic Science and Technology of China Chengdu 610054 |
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| Abstract: | An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained. |
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| Keywords: | Bipolar transistor Distortion Nonlinear analysis |
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