Electrical properties of InAs-SiO2-In2O3 MIS structures with a modified interface |
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| Authors: | N. A. Valisheva A. A. Guzev A. P. Kovchavtsev G. L. Kuryshev T. A. Levtsova Z. V. Panova |
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| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | The effect of composition of the electrolyte used in producing a thin anodic oxide layer at the surface of a semiconductor substrate on the electrical properties of the InAs-SiO2-In2O3 metal-insulator-semiconductor structures is studied. It is shown that introduction of ammonium fluoride into the electrolyte results in the formation of an interface with the density of surface states below 5 × 1010 cm?2 eV?1, the built-in charge (4–5 × 1011 cm?2, and the maximum relaxation time of the surface potential. |
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| Keywords: | KeywordHeading" >PACS 85.60.Dw |
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