Avalanche breakdown voltage of GaAs hyperabrupt junctions |
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Authors: | Azuma Shimizu Tashika Koshimizu |
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Affiliation: | Faculty of Engineering, Yamanashi University, Takeda-4, Kofu, 400, Japan |
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Abstract: | The avalanche breakdown voltage of a GaAs hyperabrupt junction diode is calculated by using unequal ionization rates for electrons and holes, and shown graphically as a function of the parameters which characterize the impurity profile of the diode. The breakdown voltage decreases abruptly at the critical point of the characteristic length Lc which varies in accordance with the impurity concentration N0 at X = 0. For example, the critical length Lc is 7.7 × 10−6 cm and 3.3 × 10−5 cm for N0 = 1 × 1018 cm−3 and 1 × 1017 cm−3, respectively. The breakdown voltage of a diode with extremely short or long characteristic length can be estimated from the results for corresponding abrupt junctions. The experimental results agree well with the calculated ones. |
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