| GaAs MMIC的MIM电容Si3N4介质的TDDB评价 |
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| 引用本文： | 黄云,钮利荣,林丽.GaAs MMIC的MIM电容Si3N4介质的TDDB评价[J].固体电子学研究与进展,2005,25(3):315-319. |
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| 作者姓名： | 黄云 钮利荣 林丽 |
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| 作者单位： | 电子元器件可靠性物理及其应用技术国家级重点实验室,广州,510610 |
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| 摘 要： | 运用TDDB理论,研究分析了G aA s MM IC的M IM氮化硅电容的导电特性和击穿特性,设计制作了三种对比分析的G aA s MM IC的M IM氮化硅电容结构,通过不同斜率的斜坡电压对氮化硅介质进行了可靠性评价,S i3N4M IM电容的可靠性与其面积和周长密切相关,介质缺陷是导致电容失效的主要因素。通过不同斜率的斜坡电压获得电场加速因子(γ)预计了10 V工作电压下的S i3N4介质层的寿命。
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| 关 键 词： | 氮化硅电容 时间依赖介质击穿 评价 寿命预计 |
| 文章编号： | 1000-3819(2005)03-315-05 |
| 修稿时间： | 2003年9月8日 |
Evaluation of the TDDB for GaAs MMIC MIM Si3N4 Capacitor |
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| HUANG Yun,NIU Lirong,LIN Li.Evaluation of the TDDB for GaAs MMIC MIM Si3N4 Capacitor[J].Research & Progress of Solid State Electronics,2005,25(3):315-319. |
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| Authors: | HUANG Yun NIU Lirong LIN Li |
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| Affiliation: | HUANG Yun~1 NIU Lirong~2 LIN Li~3 |
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| Abstract: | This paper utilizes TDDB theory to research and analyze the conductive and breakdown property of GaAs MMIC's MIM Si_3N_4 capacitor.Three kinds of GaAs MMIC MIM Si_3N_4 capacitor for analysis have been designed and made.Dielectric reliability of Si_3N_4 capacitor has been evaluated by ramp voltage of different slope.The reliability of Si_3N_4 MIM capacitor is related closely to its area and girth.The dielectric defect is the major factor that causes capacitor failure.The electric field acceleration factor(γ) has been gotten by the ramp voltage of different slope.The lifetime of the Si_3N_4 dielectric layer under 10V operating voltage has been predicated. |
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| Keywords: | Si_3N_4 capacitor TDDB evaluation lifetime predication |
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