Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs |
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| Authors: | Gholinataj-Jelodar Ehsan Aghanejad Ahmadchally Alireza Gooran-Shoorakchaly Armin Gholipour Morteza |
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| Affiliation: | 1.Electrical and Computer Engineering Department, Babol Noshirvani University of Technology, Babol, 47148-71167, Iran
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| Abstract: | Journal of Computational Electronics - An analytical I–V model for a double-gate ballistic monolayer molybdenum disulfide (MoS2) field-effect transistor (FET) with 5 nm channel... |
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