Optical-bias effect on transient electron-drift measurements in a-Si:H: Implications on the distribution and capture cross sections of the dangling bonds期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Optical-bias effect on transient electron-drift measurements in a-Si:H: Implications on the distribution and capture cross sections of the dangling bonds

Authors:	C Longeaud JP Kleider

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