Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

Authors:	Yu N Drozdov A V Novikov M V Shaleev D V Yurasov

Affiliation:	1.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhni Novgorod,Russia

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