| 半导体P—N结温度传感器失效分析与改进措施 |
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| 引用本文： | 林柏枫,刘敬真.半导体P—N结温度传感器失效分析与改进措施[J].仪表技术与传感器,1997(4):15-19. |
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| 作者姓名： | 林柏枫 刘敬真 |
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| 作者单位： | 辽宁省宽甸晶体管厂 |
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| 摘 要： | 通过失效形式，分析了半导体Ｐ－Ｎ结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
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| 关 键 词： | 温度传感器 失效形式 机理 改进 |
Failure Analysis and Counter Measures of Semiconductor P N Junction Temperature Sensors |
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| Lin Baifeng,and Liu Jingzhen Kuandian Transistor Factory of Liaoning Province,Kuandian ,Liaoning..Failure Analysis and Counter Measures of Semiconductor P N Junction Temperature Sensors[J].Instrument Technique and Sensor,1997(4):15-19. |
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| Authors: | Lin Baifeng and Liu Jingzhen Kuandian Transistor Factory of Liaoning Province Kuandian Liaoning |
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| Affiliation: | Lin Baifeng,and Liu Jingzhen Kuandian Transistor Factory of Liaoning Province,Kuandian 118200,Liaoning. |
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| Abstract: | This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes. |
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| Keywords: | Temperature Sensor Failure Mechanism Improvement |
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