| 基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性 |
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| 引用本文： | 孙凌,刘薇,段振永,许忠义,杨华岳.基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性[J].半导体学报,2008,29(11):2143-2147. |
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| 作者姓名： | 孙凌 刘薇 段振永 许忠义 杨华岳 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;上海宏力半导体制造有限公司,上海,201203;中国科学院研究生院,北京,100049;上海宏力半导体制造有限公司,上海,201203 |
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| 摘 要： | 介绍了利用MMT等离子体氮化工艺和炉管NO退火氮化工艺制备的超薄栅介质膜的电学特性和可靠性. 结合两种氮化工艺在栅介质膜中形成了双峰和单峰的氮分布. 通过漏极电流、沟道载流子和TDDB的测试，发现栅介质膜中双峰的氮分布可以有效提高器件的电学特性，更为重要的是可以极大提高器件的击穿特性. 这指明了延长掺氮氧化膜在超大规模集成电路器件栅介质层中应用的寿命，使之有可能进一步跟上技术的发展.
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| 关 键 词： | 等离子体氮化 迁移率 时变击穿 |
| 收稿时间： | 3/10/2008 3:30:00 PM |
| 修稿时间： | 7/15/2008 6:40:29 PM |
Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation |
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| Sun Ling,Liu Wei,Duan Zhenyong,Xu Zhongyi and Yang Huayue.Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation[J].Chinese Journal of Semiconductors,2008,29(11):2143-2147. |
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| Authors: | Sun Ling Liu Wei Duan Zhenyong Xu Zhongyi and Yang Huayue |
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| Affiliation: | Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China ; Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Graduate University of the Chinese Academy of Sciences,Beijing 100049,Chin;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China |
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| Abstract: | MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology. |
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| Keywords: | plasma nitridation mobility TDDB |
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