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| 电子束在硅中的能量损耗 | |
| 引用本文： | 巴维真,张明健,周光文. 电子束在硅中的能量损耗[J]. 辐射研究与辐射工艺学报, 1987, 0(2) |
| 作者姓名： | 巴维真 张明健 周光文 |
| 作者单位： | 中国科学院新疆物理研究所(巴维真，张明健)，中国科学院新疆物理研究所(周光文) |
| 摘 要： | 利用矩法对能量从0.5～8 MeV的电子束在硅中的能量损耗分布作了理论计算。并对相应的轫致辐射能损分布作了近似计算。得到了硅中吸收剂量对深度的分布。 |
| 关 键 词： | 硅 电子束 0.5～0.8 MeV 迁移方程 矩法 能损分布 深度剂量分布 |
ENERGY DISSIPATION OF ELECTRON BEAMS IN SILICON |
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| Ba Weizhen,Zhang Mingjian,Zhou Guangwen Xinjiang Institute of Physics,Academia Sinica. ENERGY DISSIPATION OF ELECTRON BEAMS IN SILICON[J]. Journal of Radiation Research and Radiation Processing, 1987, 0(2) | |
| Authors: | Ba Weizhen Zhang Mingjian Zhou Guangwen Xinjiang Institute of Physics Academia Sinica |
| Abstract: | The energy dissipation distribution of electron beams with the energyfrom 0. 5 to 8 MeV in Silicon has been calculated theoretically by the moment method.The distributions of corresponding bremsstrahlung energy losses have also been calcula-ted approximately. The depth distributions of absorbed dose in Silicon have been ob-tained. |
| Keywords: | Electron heams 0.5 to 8 MeV Transport equation Moment method Energy dissipation distribution Depth dose distribution |
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