SCR operation mode of diode strings for ESD protection |
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Authors: | Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Doma ski, Mauro Ciappa,Wolfgang Fichtner |
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Affiliation: | aAIM AP D TD M1, Infineon Technologies, D-85579 Neubiberg, Germany;bCOM BTS LIB ESD, Infineon Technologies, D-85579 Neubiberg, Germany;cQAG PD DS RB, Qimonda, D-85579 Neubiberg, Germany;dIntegrated Systems Laboratory, ETH Zürich, CH-8092 Zürich, Switzerland |
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Abstract: | Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised. |
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