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SCR operation mode of diode strings for ESD protection
Authors:Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Doma&#x  ski, Mauro Ciappa,Wolfgang Fichtner
Affiliation:aAIM AP D TD M1, Infineon Technologies, D-85579 Neubiberg, Germany;bCOM BTS LIB ESD, Infineon Technologies, D-85579 Neubiberg, Germany;cQAG PD DS RB, Qimonda, D-85579 Neubiberg, Germany;dIntegrated Systems Laboratory, ETH Zürich, CH-8092 Zürich, Switzerland
Abstract:Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised.
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