| IGBT特性的辐照效应 |
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| 引用本文： | 袁寿财,刘树林.IGBT特性的辐照效应[J].微电子学与计算机,1997,14(4):14-16. |
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| 作者姓名： | 袁寿财 刘树林 |
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| 作者单位： | 西安电力电子技术研究所!西安，710061，西安建筑科技大学自控系!西安，710055 |
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| 摘 要： | 本文简述了中子辐照对IGBT特性的影响，给出了器件在中子辐射注量高达10（13）n／cm2时的实验结果。实现发现，随着中子注量的增加，开关时间缩短，阀值电压漂移。对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
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| 关 键 词： | IGBT 辐照 开关时间 阈值电压 |
The Effects of Radiation on the Characteristics of the IGBT |
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| Yuan Shoucai.The Effects of Radiation on the Characteristics of the IGBT[J].Microelectronics & Computer,1997,14(4):14-16. |
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| Authors: | Yuan Shoucai |
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| Abstract: | In this paper the effects of neutron radiation on the characteristics of IGBT are simply described, experimental results are presented for devices that have been irradiated up to a fluence of 1013 n/cm2. It is found that the switching time decreases and the threshold voltage shift with increasing neutron fluence. For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density. |
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| Keywords: | IGBT Radiation Switching-time Threshold-voltage |
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