| 基于IR2214芯片的大功率IGBT晶体管驱动及保护电路的设计 |
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| 引用本文： | 陈志强,宋凡峰. 基于IR2214芯片的大功率IGBT晶体管驱动及保护电路的设计[J]. 江苏电器, 2008, 0(7): 10-12 |
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| 作者姓名： | 陈志强 宋凡峰 |
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| 作者单位： | 1. 四方车辆研究所有限公司,山东,青岛,266000
2. 山东水利职业学院,山东,日照,276826 |
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| 摘 要： | 针对逆变需要的1200V大功率IGBT晶体管，分析了其栅极驱动特性，介绍了一种可驱动高压大功率IGBT的集成驱动IC IR2214芯片，并根据其特性设计了一种典型的应用电路。试验验证表明，该驱动电路具有良好的驱动及保护能力。
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| 关 键 词： | 绝缘栅双极晶体管 驱动电路 IR2214芯片 过流保护 |
Design of High-Power Insulated Gate Bipolar Transistor(IGBT)Drive and Protection Circuit Based on IR2214 |
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| CHEN Zhi-qiang,SONG Fan-feng. Design of High-Power Insulated Gate Bipolar Transistor(IGBT)Drive and Protection Circuit Based on IR2214[J]. , 2008, 0(7): 10-12 |
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| Authors: | CHEN Zhi-qiang SONG Fan-feng |
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| Affiliation: | CHEN Zhi-qiang, SONG Fan-feng ( 1 Sifang Vehicle Research Institute Co., Ltd, Qingdao 266000, China; 2 Shandong Water Conservancy Vocational College, Rizhao 276826, China) |
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| Abstract: | Aiming at reverse needed 1 200 V high-power IGBT, analysis was made to its grid polar drive characteristics and introduction was made to a kind of IC IR2214 chip which can drive high voltage high-power IGBT, and a typical application circuit was designed ac-cording to its characteristics. The test verifi es that the drive circuit is with fi ne drive and protection ability. |
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| Keywords: | insulated gate bipolar transistor (IGBT) drive circuit IR2214 chip over-current protection |
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