| 非晶硅薄膜PECVD法制备与光学性质表征 |
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| 引用本文： | 郝江波,夏冬林,姜宏,赵修建.非晶硅薄膜PECVD法制备与光学性质表征[J].武汉理工大学学报,2007,29(12):55-58. |
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| 作者姓名： | 郝江波 夏冬林 姜宏 赵修建 |
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| 作者单位： | 1. 武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070
2. 中国洛阳浮法玻璃集团有限责任公司,洛阳,471009 |
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| 基金项目： | 湖北省武汉市科技攻关项目;硅酸盐材料工程教育部重点实验室基金 |
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| 摘 要： | 在普通玻璃上采用等离子体增强化学气相沉积(PECVD)方法制备氢化非晶硅薄膜,研究了在不同温度、压力、功率、H2/SiH4气体流量比等条件下氢化非晶硅的沉积速率,折射率、消光系数、吸收系数、光学禁带宽度等光学性质。实验结果表明非晶硅薄膜的折射率随着入射光波长的增加而减小;在500 nm处吸收系数高达8.5×104cm-1,光学禁带宽度在1.60—1.78 eV之间变化。
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| 关 键 词： | 非晶硅薄膜 折射率 吸收系数 光学禁带宽度 |
| 文章编号： | 1671-4431（2007）12-0055-04 |
| 收稿时间： | 2007-09-08 |
| 修稿时间： | 2007年9月8日 |
Research on Preparation and Optical Properties of Amorphous Silicon Thin Films by PECVD |
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| HAO Jiang-bo,XIA Dong-lin,JIANG Hong,ZHAO Xiu-jian.Research on Preparation and Optical Properties of Amorphous Silicon Thin Films by PECVD[J].Journal of Wuhan University of Technology,2007,29(12):55-58. |
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| Authors: | HAO Jiang-bo XIA Dong-lin JIANG Hong ZHAO Xiu-jian |
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| Abstract: | Amorphous hydrogenated silicon was fabricated by plasma enhanced chemical deposition on glass.The thickness,refractive index and extinctive index were calculated by optical transmittance and reflection of the film,which measured by NKD7000w.The deposition rate of the film was studied at different temperature;pressure,RF power and the ratio of H2/SiH4.It indicated that the deposition rate of hydrogenated amorphous silicon increased with the increasing of the temperature,RF power,pressure and the content of SiH4.The refractive index of hydrogenated amorphous silicon increased with the increasing of the temperature.The refractive index and extinctive index of the film decrease with the increase incident light wavelength.The absorption coefficient and optical bandgap of the film was evaluated. |
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| Keywords: | a-Si thin film refractivc index absorption coefficient optical bandgap |
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