Ga近硅表面连续低浓度分布特性分析

为进一步揭示Ga在SiO2／Si系统下的完整扩散特性和分布行为，利用扩展电阻(SRP)分析方法，对恒定源、限定源，二次氧化(指磷扩散的再分布过程)不同温度和气氛，Ga在近硅表面微区域浓度连续性变化状态进行了系统研究。结果表明，恒定源掺杂过程有Ga的低浓度区形成；限定源再分布过程Ga出现反扩散特性：二次氧化过程Ga产生异常分凝特性。上述分布行为的综合效果，导致近硅表面Ga的浓度处于耗尽状态。对Ga的表面耗尽，可通过适当的工艺方法给予补偿，因此Ga基区晶体管的电学性能仍然优于同类产品。

Analysis of Continuous Low Concentration Distribution of Ga Impurity at Nearby Si Surface

In order to further reveal the whole diffusion characters and distribution behaviors of Ga impurity in SiO2/Si system, the changeable concentration laws of Ga impurity at puny region of the nearby Si surface, under different temperatures and different atmosphere in invariable resource diffusion, finite resource diffusion and re-oxygenation process are investigated by SRP. The results are as follows: the low concentration region forms in invariable resource diffusion process; the reversed diffusion character happens in finite resource diffusion process; the exceptional segregation comes into being in re-oxygenation process.