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Sn~(4+)替代Nb~(5+)对Bi_2(Zn_(1/3)Nb_(2/3))_2O_7陶瓷性能的影响
引用本文:张红霞,丁士华,陈涛,宋天秀,张东.Sn~(4+)替代Nb~(5+)对Bi_2(Zn_(1/3)Nb_(2/3))_2O_7陶瓷性能的影响[J].电子元件与材料,2008,27(1):32-34.
作者姓名:张红霞  丁士华  陈涛  宋天秀  张东
作者单位:西华大学,材料科学与工程学院,四川,成都,610039
摘    要:采用固相反应法制备了Bi2(Zn1/3Nb2/3)2O7(BZN)微波陶瓷,并借助XRD、SEM及LCR4284测试仪,研究了Sn4+取代Nb5+对BZN陶瓷显微结构和介电性能的影响。结果表明:随着Sn4+替代量的增加,微观形貌中出现棒晶;选取20~80℃,100 kHz时的εr计算,介电常数温度系数由205×10–6/℃逐渐减小到–240×10–6/℃;当替代量x(Sn4+)为0.16时,样品出现介电弛豫现象;随着测试频率的增加,介电弛豫峰向高温移动。

关 键 词:无机非金属材料  Bi2O3-ZnO-Nb2O5陶瓷  介电弛豫  介电性能
文章编号:1001-2028(2008)01-0032-03
收稿时间:2007-09-16
修稿时间:2007年9月16日

Effect of substitution of Sn~(4+) for Nb~(5+) on properties of Bi_2(Zn_(1/3)Nb_(2/3))_2O_7-based ceramics
ZHANG Hong-xia,DING Shi-hua,CHEN Tao,SONG Tian-xiu,ZHANG Dong.Effect of substitution of Sn~(4+) for Nb~(5+) on properties of Bi_2(Zn_(1/3)Nb_(2/3))_2O_7-based ceramics[J].Electronic Components & Materials,2008,27(1):32-34.
Authors:ZHANG Hong-xia  DING Shi-hua  CHEN Tao  SONG Tian-xiu  ZHANG Dong
Affiliation:ZHANG Hong-xia,DING Shi-hua,CHEN Tao,SONG Tian-xiu,ZHANG Dong(College of Materials Science , Engineering,Xihua University,Chengdu 610039,China)
Abstract:The Bi2(Zn1/3Nb2/3)2O7 microwave ceramics were prepared by traditional solid phase reaction.Effects of substitution of Sn4+ for Nb5+ on and the microstructure and dielectric properties of Bi2O3-ZnO-Nb2O5-based ceramics were investigated by XRD and SEM etc.The results show that with increasing of Sn4+ amount,some club-shaped crystals appear;the temperature coefficient of permittivity gradually decreases from 205×10–6/℃ to –240×10–6/ ℃ at 100 kHz and 20~80 ℃;A typical dielectric relaxation behavior is observed for Bi2Zn2/3Nb7/6Sn1/6O7 sample at x(Sn4+) =0.16.With the increase of testing frequency,the relaxation peak for the dielectric constant moves to high temperature.
Keywords:non-metallic inorganic material  Bi2O3-ZnO-Nb2O5 ceramics  dielectric relaxation  dielectric properties
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