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Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2 |
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| Authors: | P Falcigno N Mü nzel H Holzwarth H -T Schacht C Mertesdorf W Bronner G Kaufel A Timko and O Nalamasu |
| Affiliation: | a OCG Microelectronic Materials AG Klybeckstrasse 141,CH-4052, Basel, Switzerland b Fraunhofer-Institut für Angewandte Festkörperphysik Tullastrasse 72, D-79108, Freiburg, Germany c AT&T Bell Laboratories 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA |
| Abstract: | We have developed a novel chemically amplified deep-UV photoresist called ARCH2. ARCH2 displays a resolution of<0.23μm with a DOF of 1.0μm at 0.25μm. This material also displays superior time delay stability (>8 hours). The post exposure bake (PEB) temperature was varied from 100°C to 120°C and the PEB time was varied from 60s to 180s. This had very little effect on the CD of the resist profiles. Preliminary etching experiments in a conventional reactive ion etcher were then carried out using CF4 to etch TiN. In these experiments the ARCH2 etched at a similar rate as conventional Novolac. |
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