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三毫米单片集成电路噪声系数测量技术
引用本文:郑易平,郑延秋. 三毫米单片集成电路噪声系数测量技术[J]. 国外电子测量技术, 2009, 28(9): 53-56
作者姓名:郑易平  郑延秋
作者单位:石家庄供水集团,石家庄,050021;河北半导体研究所,石家庄,050002
摘    要:采用双平衡混频器和本振信号源,把3 mm频段的噪声信号下变频至噪声系数分析仪的频率范围内,配探针台作在片噪声系数测量。为了减小本振源相位噪声和系统元件损耗的影响,在混频器前加低噪声放大器,使系统更加稳定,重复性好、准确度高。该系统具有频率范围宽可扩展至75~110 GHz、结构简单、成本低的特点。

关 键 词:三毫米  噪声系数  在片测试

Noise figure measurement techniques of 3 mm monolithic integrated circuits
Zheng Yiping,Zheng Yanqiu. Noise figure measurement techniques of 3 mm monolithic integrated circuits[J]. Foreign Electronic Measurement Technology, 2009, 28(9): 53-56
Authors:Zheng Yiping  Zheng Yanqiu
Affiliation:Zheng Yiping~1 Zheng Yanqiu~2 (1.Shijiazhuang Water Supply Group,Shijianzhuang 050021,China,2.Hebei Semiconductor Research Institute,Shijiazhuang 050002,China)
Abstract:In this project,we use double balanced mixer and LO to down-convert 3mm noise signal to within the frequency span of noise figure meter,it be used with wafer station to do on-wafer noise figure measurement.In order to reduce the influence of the phase noise of LO and the loss of system components,we add a low noise figure amplifier in front of the mixer to make the system more stabilized,have good repeatability and high accuracy.Experimental data shows that the system has the following advantages:its freque...
Keywords:3 mm  noise figure  on-wafer test  
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