A silicon carbide LOCOS process using enhanced thermal oxidation by argon implantation |
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| Authors: | Dev Alok B. J. Baliga |
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| Affiliation: | (1) Power Semiconductor Research Center, North Carolina State University, 27695 Raleigh, NC |
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| Abstract: | A process is described for creating local oxidation of silicon structure (LOCOS) structures in silicon carbide using enhanced thermal oxidation by argon implantation. Thicker oxides were created in selective regions by using multiple energy argon implants at a dose of 1 × 1015 cm−2 prior to thermal oxidation. Atomic force microscopy was used to analyze the fabricated LOCOS structure. |
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| Keywords: | Ion implantation local oxidation of silicon structure (LOCOS) oxidation silicon carbide |
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