| 脉冲激光沉积方法生长硅基ZnO薄膜的特性 |
| |
| 引用本文： | 何建廷,庄惠照,薛成山,田德恒,吴玉新,刘亦安,胡丽君,薛守斌.脉冲激光沉积方法生长硅基ZnO薄膜的特性[J].功能材料,2006,37(6):978-980,985. |
| |
| 作者姓名： | 何建廷 庄惠照 薛成山 田德恒 吴玉新 刘亦安 胡丽君 薛守斌 |
| |
| 作者单位： | 山东师范大学,半导体研究所,山东,济南,250014 |
| |
| 摘 要： | 用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜.X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn-O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构.利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜.
|
| 关 键 词： | PLD ZnO 薄膜 六方纤锌矿结构 PLD ZnO thin films hexagonal wurtzite structure |
| 文章编号： | 1001-9731（2006）06-0978-03 |
| 收稿时间： | 2005-08-08 |
| 修稿时间： | 2005-08-082005-10-09 |
Growth and characteristics of zinc oxide thin films on silicon(111) by pulsed laser deposition |
| |
| HE Jian-ting,ZHUANG Hui-zhao,XUE Cheng-shan,TIAN De-heng,WU Yu-xin,LIU Yian,HU Li-jun,XUE Shou-bin.Growth and characteristics of zinc oxide thin films on silicon(111) by pulsed laser deposition[J].Journal of Functional Materials,2006,37(6):978-980,985. |
| |
| Authors: | HE Jian-ting ZHUANG Hui-zhao XUE Cheng-shan TIAN De-heng WU Yu-xin LIU Yian HU Li-jun XUE Shou-bin |
| |
| Abstract: | ZnO thin films were deposited on n-Si(111) substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD)showed that there was only one sharp diffraction peak at 2θ=34° with the full width at the half maximum (FWHM) of 0.75°.Fourier transform infrared spectrophotometer (FTIR) presented a intensely cliffy absorption peak located at 414. 92nm which was resulted from Zn-O bonds. Photoluminescence (PL) gave us two light emission bands, corresponding to the wavelength of 370 and 460nm. Scanning electron microscopy (SEM) and selected-area electron diffraction (SAED) were employed to analyze the morphology and crystal lattice structure of ZnO thin films. ZnO thin films which had an excellently c-axis preferred orientation and a hexagonal wurtzite structure were prepared. |
| |
| Keywords: | PLD ZnO thin films hexagonal wurtzite structure |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
