Simulation of transient thermal states in layered electronic microstructures

The analysis of dynamic temperature changes in microelectronic layered circuit (especially made in thick-film technology) has been presented in the paper. Such transient states are caused by electric pulse with high energy and short time of duration. It leads to short but the very violent temperature increase and - as result - defects or parameter changes of active layer. The mathematical function which describes the instantaneous temperature changes was presented in this paper in order to provide more accurate analysis of reliability and thermal properties measurement problems.The two-layer structures (with different thermo-physical properties) were the subject of conducted research, especially one of them, namely heat source excited by electric pulse. Such configuration is typical for microcircuits made in hybrid technology such as LTCC (low temperature co-fired ceramic), HTCC (high temperature co-fired ceramic) as well as thick - film technology in which polymer and photoimageable (photosensitive) materials are used.