A new two-dimensional C-V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications |
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Authors: | Rajesh K Tyagi Manoj Pandey |
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Affiliation: | a Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, GGS Indraprastha University, 580, U & I Building, Delhi Palam Vihar Road, Bijwasan, New Delhi -110061, India b Department of Electronics and Communication Engineering ITM, Sector-23 A Gurgaon, India |
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Abstract: | An analytical two-dimensional capacitance-voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region. The gate source and gate drain capacitances are calculated for 120 nm gate length including the effects of fringing field capacitances. We obtain a cut-off frequency (fT) of 120 GHz and maximum frequency of oscillations (fmax) of 160 GHz. The model is very useful for microwave circuit design and analysis. Additionally, these devices allow a high operating voltage VDS, which is demonstrated in the present analysis. These results show an excellent agreement when compared with the experimental data. |
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Keywords: | Velocity saturation Gate source capacitance Gate drain capacitance Cut-off frequency Maximum frequency of oscillations |
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