Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD |
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Authors: | Weijun Luo Xiaoliang Wang Hongling Xiao Cuimei Wang Junxue Ran Lunchun Guo Jianping Li Hongxin Liu Yanling Chen Fuhua Yang Jinmin Li |
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Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm×5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 μm and a gate width of 60 μm demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 μA/mm at the gate voltage of −10 V. |
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Keywords: | AlGaN/GaN High electron mobility transistor (HEMT) Si (1 1 1) |
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