Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy |
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Authors: | A. Pulzara-Mora,E. Cruz-Herná ndez,V.H. Mé ndez-Garcí a |
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Affiliation: | a Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia sede Manizales, A.A 127, Colombia b Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado Postal 14-740, México D.F. 07000, Mexico c Instituto de Investigación en Comunicación Óptica, UASLP, Obregón 64, San Luis Potosí, SLP 78000, Mexico |
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Abstract: | In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ monitored by reflection high-energy electron diffraction (RHEED). The shape and size of the InAs SAQDs were significantly affected by the growth temperature and the arsenic over-pressure. We observe a decrease of the SAQDS density and an increase in their height by increasing the growth temperature, and/or decreasing the arsenic over-pressure. This is accompanied by a remarkable red-shift of the PL emission energy from 1.3 to . |
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Keywords: | 75 75.50.&minus y 75.50.Bb |
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