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Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1) |
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| Authors: | O Saad R Ajjel H Maaref G Brémond |
| Affiliation: | a Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Département de Physique, Faculté des Sciences, 5019 Monastir, Tunisia b Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Site INSA de Lyon, Bâtiment Blaise Pascal, 7 Avenue J. Capelle, 69621 Villeurbanne, France c Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Site Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France |
| Abstract: | The electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(0 0 1) were studied by using capacitance-voltage (C-V) analysis and photoluminescence (PL) measurements. The level positions of electrons and holes could be studied separately by using n- and p-type InAlAs matrices, respectively. The holes are found to be more confined than electrons in these kinds of dots. |
| Keywords: | Capacitance-voltage analysis InAs/InAlAs/InP(0 0 1) Quantum dots |
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