High-power transverse micro-stack weakly coupled laser diode bars

Transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. Micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapor deposition (MOCVD) and laser diode bars with 50% fill factors were fabricated. Experiments show that the insulated recesses strongly affect the properties of the bars. When the recess depth is less than 1.13 μm, the bars do not work well. By optimizing the insulated recess depth, threshold current can be reduced to 7.05 A, the optical power exceeds 79 W under 50 A driving current and the slope efficiency reaches 1.81 W/A.