Characteristics of AlGaAs/GaAs heterostructure RT-SCR model |
| |
Authors: | B.D. Barkana |
| |
Affiliation: | Electrical Engineering Department, University of Bridgeport, 221 University Avenue, Bridgeport, CT 06604, USA |
| |
Abstract: | Electrical properties of a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) model have been presented. The current, temperature, gain, doping concentration, and layer size versus voltage relationships have been numerically obtained. The RT-SCR device requires smaller turn-on voltage than a comparable traditional device for the same gate current. This indicates that, in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage. Characteristics of the device are affected by p1, n1, and p2 regions. It is showed that higher doping concentrations cause lower turn-on voltages and an increase in the region width results in higher turn-on voltages for p1 and p2 regions. Changing the doping concentration and width in n1 region affects the characteristics of the structure differently from that of the p1 and p2 regions. |
| |
Keywords: | RT-SCR Thyristors Semiconductor devices |
本文献已被 ScienceDirect 等数据库收录! |
|