Formation of Short Pulses with a Subnanosecond Rise Time and a Peak Power of Up to 1 GW by a Semiconductor Avalanche Sharpener

The results of experiments on the formation of high-power pulses with a rise time of <1 ns and a duration of 1–2 ns by a solid-state semiconductor sharpener operating in the mode of delayed impact ionization wave are presented. A peak power of 1 GW in a single-pulse operation mode and 750 MW at a pulse repetition rate of 3.5 kHz was obtained across a 50- load. Experiments on the pulse transformation using a forming line with a variable wave impedance and generation of bipolar voltage pulses are described.