| 基于AlN基板的不同Al组分的AlGaN材料生长 |
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| 引用本文： | 周小伟,李培咸,郝跃. 基于AlN基板的不同Al组分的AlGaN材料生长[J]. 功能材料与器件学报, 2009, 15(6) |
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| 作者姓名： | 周小伟 李培咸 郝跃 |
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| 作者单位： | 西安电子科技大学微电子学院,西安710071;宽禁带半导体材料与器件重点实验室,西安,710071;西安电子科技大学微电子学院,西安710071;宽禁带半导体材料与器件重点实验室,西安,710071;西安电子科技大学微电子学院,西安710071;宽禁带半导体材料与器件重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金重点项目，863高技术计划项目 |
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| 摘 要： | 采用脉冲法生长了200nm厚的AlN薄膜,其XRD摇摆曲线的半高宽为130aresec,表面粗糙度为2.021nm.以此AIN层为基板生长了不同Al组分的AlGaN薄膜,高分辨率XRD测试发现,随Al组分的增加,AlN基板层对AlGaN薄膜施加的压应力增大,同时,AlGaN薄膜在生长合并过程中产生的张应力也增大.在Al组分为0.67时,发现这两种应力处于一种平衡的状态,此时的AlGaN薄膜有最优的结晶质量.
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| 关 键 词： | 脉冲MOCVD法 AlGaN材料 薄膜应力 |
Growth of AlGaN films with different Al fraction on AlN template |
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| ZHOU Xiao-wei,LI Pei-xian,HAO Yue. Growth of AlGaN films with different Al fraction on AlN template[J]. Journal of Functional Materials and Devices, 2009, 15(6) |
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| Authors: | ZHOU Xiao-wei LI Pei-xian HAO Yue |
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| Affiliation: | ZHOU Xiao-wei,LI Pei-xian,HAO Yue,CHEN Hai-feng,DU Yang(School of Microelectronics,Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education,Xidian University,Xi'an 710071,China) |
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| Abstract: | 200nm AlN film is grown by pulse MOCVD.It's Full width at half Maximum(FWHM) of XRD rocking curve is only 130arcsec and root mean square(RMS) roughness is 2.021nm.Used AlN as template,AlGaN films with different Al fraction are grown.High resolution XRD measurement indicate that compressive strain which AlN template apply to AlGaN films and tensile strain which come from coalescence of islands in AlGaN films increase with increasing Al fraction.When the Al fraction is about 0.67,the tensile strain and the co... |
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| Keywords: | Pulse MOCVD AlGaN Material Film Strain |
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