单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

采用单靶磁控溅射法制备了铜铟硒(CIS)和铜铟锌硒(CIZS)薄膜。XRD表征发现CIZS-300出现了与其它薄膜不同的择优取向, 分析认为贫铜的状态和适宜温度可能促使薄膜择优取向从(112)向(220)转化; 拉曼光谱在171 cm^-1处出现的较强峰, 和206 cm^-1处出现的较弱峰, 分别为A₁和B₂振动模式, 而Zn的掺入导致A₁拉曼峰的宽化和蓝移; Zn的掺入使Cu含量改变进而使CIZS禁带宽度增大, 这是由于Se的p轨道和Cu的d轨道杂化引起的; SEM测试结果表明CIZS薄膜表面比CIS表面更为紧密、平滑。

Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

CuInSe₂ (CIS) and Cu_0.9In_0.9Zn_0.2Se₂ (CIZS) thin films were deposited by Radio-Frequency (RF) magnetron sputtering process. X-ray diffraction (XRD) results indicate CIZS film deposited at 300℃ (CIZS-300) is (220) preferred orientation which is different from (112) preferred orientation of other films. Cu-poor and appropriate temperature are major factors for (220) preferred orientation of grains. The Raman spectra show a strong peak around 171 cm^-1 and a weak peak around 206 cm^-1, which corresponding to A₁ and B₂ modes. Substitution of Zn for Cu leads to a broadening and blue-shift of A₁ Raman mode. The band gap E_opt of CIZS film increases due to a reduced Se p-Cu d interband repulsion with Zn doping. Scanning electron microscope (SEM) measurement demonstrates that the surface morphology of CIZS is more compact and smoother than that of CIS thin films.