Spin Polarization Measurements of InAs-Based LEDs |
| |
Authors: | C J Meining K A Korolev B D McCombe P Grabs I Chado G Schmidt L W Molenkamp |
| |
Affiliation: | 1.Department of Physics and CAPEM,University at Buffalo,Buffalo,USA;2.Physikalisches Institut (EP3),Universit?t Würzburg,Würzburg,Germany |
| |
Abstract: | We have investigated electroluminescence (EL) characteristics of hybrid II–VI/III–V light emitting diodes (LEDs) at low temperatures
and in magnetic fields up to 10 T. Spin-polarized or unpolarized electrons are injected from n-type Cd(Mn)Se layers into a
wide quantum well of InAs where they undergo radiative recombination with unpolarized holes injected via p-type InAs/AlAsSb
layers. Measurements of the circular polarization properties of the emitted mid-infrared EL have been made to investigate
spin-injection from the Brillouin paramagnet CdMnSe into InAs; a “non-magnetic” CdSe injector is used for comparison. To infer
spin polarization from the circular polarization degree, details of the InAs band structure in a magnetic field have to be
taken into account due to the large electron g-factors and, more importantly, because radiative recombination and spin relaxation of injected carriers occur on similar
timescales. As a result optical and spin polarization are not simply related to each other. Experimentally, the circular polarization
degrees of magnetic and non-magnetic structures are observed to be very similar. In addition, broad, multi-component EL features,
as well as significant carrier heating complicate the quantitative analysis.
|
| |
Keywords: | spin injection light emitting diode InAs narrow-gap semiconductor circular polarized electroluminescence |
本文献已被 SpringerLink 等数据库收录! |
|