Improvement in Wear Resistance of High-Strength and High-Toughness Silicon Nitride Modified by Ion Implantation |
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Authors: | Naoki Nakamura Kiyoshi Hirao Yukihiko Yamauchi |
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Affiliation: | Synergy Ceramics Laboratory, Fine Ceramics Research Association, Nagoya, 463-8687, Japan;Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology, Nagoya, 463-8687, Japan |
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Abstract: | Surface modification by ion implantation has been conducted to improve the tribological properties of a high-strength and high-fracture-toughness unidirectionally aligned silicon nitride (UA-SN). B+, N+, Si+, and Ti+ ions were implanted into the planes parallel and normal to the grain alignment of the UA-SN with a fluence of 2 × 1017 ions/cm2 at an energy of 200 keV. The ion implanted UA-SN showed a dramatic improvement in wear resistance. For example, the specific wear rate of the Si+-implanted specimen in the direction parallel to the grain alignment was reduced to a value of 3 × 10−10 mm2/N, equal to 1/20 of the unimplanted one. Cross-sectional transmission electron microscopy indicates the high wear resistance was attributed to the amorphous surface caused by the ion implantation. |
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Keywords: | silicon nitride wear/wear resistance transmission electron microscopy |
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