| 自对准栅金刚石MESFET器件研究 |
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| 引用本文： | 周建军,柏松,陈刚,孔岑,耿习娇,陆海燕,孔月婵,陈堂胜. 自对准栅金刚石MESFET器件研究[J]. 固体电子学研究与进展, 2013, 0(1): 28-31,85 |
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| 作者姓名： | 周建军 柏松 陈刚 孔岑 耿习娇 陆海燕 孔月婵 陈堂胜 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室 |
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| 摘 要： | 基于表面氢化处理的金刚石材料,利用自对准栅工艺技术研制了p型金刚石肖特基栅场效应晶体管(MESFET)。利用AFM和Raman测试方法对材料的特性进行了测试及分析。同时,对研制的金刚石MESFET器件进行了TLM以及直流特性测试及性能分析。利用TLM方法测试获得的表面氢化处理金刚石材料的方阻和Au欧姆接触比接触电阻率分别为4kΩ/□和5.24×10-4Ω.cm2。研制的1μm栅长金刚石MESFET器件的最大电流在-5V偏压下达到10mA/mm以上。
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| 关 键 词： | 金刚石 肖特基栅场效应晶体管 表面氢化 |
Research on the Self-aligned Gate Diamond MESFET |
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| ZHOU Jianjun,BAI Song,CHEN Gang,KONG Cen,GENG Xijiao,LU Haiyan,KONG Yuechan,CHEN Tangsheng. Research on the Self-aligned Gate Diamond MESFET[J]. Research & Progress of Solid State Electronics, 2013, 0(1): 28-31,85 |
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| Authors: | ZHOU Jianjun BAI Song CHEN Gang KONG Cen GENG Xijiao LU Haiyan KONG Yuechan CHEN Tangsheng |
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| Affiliation: | (Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | Based on the hydrogen-terminated surface channel diamond material,the diamond metal-semiconductor field-effect transistors(MESFETs) were fabricated on the undoped diamond substrate using a recess-type self-aligned gate process.The diamond material was characterized by AFM and Raman spectrometer.And the direct current characteristic of the diamond MESFET was measured.By using the TLM method,the measured sheet resistance of the diamond material and the specific contact resistance of the Au ohmic contact are 4 kΩ/□ and 5.24×10-4 Ω·cm2,respectively.The maximum drain current density of the fabricated 1μm gate length diamond MESFET is more than 10 mA/mm. |
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| Keywords: | diamond MESFET hydrogen-terminated surface channel |
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