| LEC法GaAs单晶生长中热应力分布研究 |
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| 引用本文： | 刘春梅,李明伟,陈怀杰.LEC法GaAs单晶生长中热应力分布研究[J].材料科学与工程学报,2005,23(4):546-549. |
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| 作者姓名： | 刘春梅 李明伟 陈怀杰 |
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| 作者单位： | 重庆大学,动力工程学院,重庆,400044;重庆大学,动力工程学院,重庆,400044;重庆大学,动力工程学院,重庆,400044 |
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| 基金项目： | 国家自然科学基金
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教育部优秀青年教师资助计划 |
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| 摘 要： | 采用有限元法对LEC法生长的3英寸GaAs单晶中的热应力进行求解.假设晶体为轴对称的各向同性线弹性体.主要讨论了不同液封厚度、轴向磁场强度以及晶体转速下的流动和传热所对应的晶体中的热应力分布,同时也考察了界面形状对应力的影响.
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| 关 键 词： | LEG法 热应力 GaAs单晶 |
| 文章编号： | 1004-793X(2005)04-0546-04 |
| 修稿时间： | 2004年9月20日 |
Thermal Stress Calculation of GaAs Crystal in LEC Growth Configuration |
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| LIU Chun-mei,LI Ming-wei,CHEN Huai-jie.Thermal Stress Calculation of GaAs Crystal in LEC Growth Configuration[J].Journal of Materials Science and Engineering,2005,23(4):546-549. |
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| Authors: | LIU Chun-mei LI Ming-wei CHEN Huai-jie |
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| Abstract: | The stress distribution of 3 in.(0.075m) diameter single-crystal GaAs by Liquid Encapsulation Czochralski (LEC) method has been calculated with finite element numerical methods. It has been assumed that crystal was in a pseudosteady axisymmetric state with isotropic linearly elastic body. In accordance with different flow and heat transfer under the effect of boron oxide thickness, axial magnetic field strength as well as the rotation of crystal, the thermal stress distribution in the crystal has been calculated, meanwhile the effect of the solid/liquid interface shape has been considered. |
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| Keywords: | LEC method thermal stress GaAs crystal |
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