Microstructure,optical, electrical properties,and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics |
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| Affiliation: | 1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China;2. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;3. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China;1. Hebei University of Science and Technology, Shijiazhuang 050018, China;2. Hebei University of Technology, Tianjin 300130, China;3. Nankai University, Tianjin 300071, China;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China;2. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, PR China;3. Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration, Anhui University, Hefei 230601, PR China |
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| Abstract: | Deposition of high-k HfO2 gate dielectric films on n-type Si and quartz substrates by sol–gel spin-on coating technique has been performed and the structural, optical and electrical characteristics as a function of annealing temperature have been investigated. The structural and optical properties of HfO2 thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–vis), and spectroscopic ellipsometry (SE). Results indicate that the monoclinic form of HfO2 appears when temperature rises through and above 500 °C. The reduction in band gap is observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density and the decrease of the extinction coefficient with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfO2/Al capacitor are analyzed by means of the high frequency capacitance–voltage (C–V) and the leakage current density–voltage (J–V) characteristics. And the leakage current conduction mechanisms as functions of annealing temperatures are also discussed. |
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| Keywords: | Sol–gel Electrical properties Leakage current transport mechanism Optical properties |
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