Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm,Yb and Lu) thin films |
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| Affiliation: | 1. Physics Department, Faculty of Sciences, UMBB University, 35000 Boumerdes, Algeria;2. URMPE Unit, UMBB University, 35000 Boumerdes, Algeria;3. Institute of Electrical and Electronic Engineering, UMBB University, 35000 Boumerdes, Algeria;4. Department of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain;5. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Centre for Environmental and Energy Nanomaterials, Institute of Solid State Physics,Chinese Academy of Sciences, Hefei 230031, PR China;6. Physics Department, College of Sciences, Sultan Qaboos University, PO Box 36, Oman;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China;2. Research School of Chemistry, The Australian National University, Australian Capital Territory, Canberra 0200, Australia;3. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;1. School of Advanced Materials Engineering, Changwon National University, Gyeongnam 641-773, Republic of Korea;2. Department of Physics, Changwon National University, Gyeongnam 641-773, Republic of Korea |
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| Abstract: | In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10?7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm. |
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| Keywords: | A Films A Sol–gel processes C Electrical properties C Ferroelectric properties |
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